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Structural defects in ZnGeP 2 single crystals revealed by X‐ray topography
Author(s) -
Lei Zuotao,
Kolesnikov Aleksei,
Vasilenko Anton,
Zhu Chongqiang,
Verozubova Galina,
Yang Chunhui
Publication year - 2018
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576718006726
Subject(s) - dislocation , materials science , full width at half maximum , diffraction , crystal (programming language) , crystallography , single crystal , x ray , diffraction topography , x ray crystallography , optics , chemistry , physics , composite material , optoelectronics , computer science , programming language
The results of X‐ray transmission topography and diffraction analysis of a ZnGeP 2 single crystal grown by the vertical Bridgman method in the [001] direction are presented and discussed. The FWHM of rocking curves over a large area of a (100) longitudinal slice is about 12′′, which is indicative of the high quality of the examined sample. Glow discharge mass spectrometry does not show significant content of foreign chemical elements. X‐ray topography reveals growth striations and dislocations. The predominant defects are single dislocations and their pile‐ups. Near to the growth‐axis region, curved dislocation bundles passing through the entire crystal are observed, on which precipitates are formed. In the initial part of the crystal, dislocations are located chaotically, while towards the middle of the sample they are aligned along the growth striae. In the final part of the crystal, the dislocation density increases.