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Twin domain imaging in topological insulator Bi 2 Te 3 and Bi 2 Se 3 epitaxial thin films by scanning X‐ray nanobeam microscopy and electron backscatter diffraction
Author(s) -
Kriegner Dominik,
Harcuba Petr,
Veselý Jozef,
Lesnik Andreas,
Bauer Guenther,
Springholz Gunther,
Holý Václav
Publication year - 2017
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576717000565
Subject(s) - electron backscatter diffraction , materials science , diffraction , optics , x ray , scanning electron microscope , topological insulator , epitaxy , crystal (programming language) , x ray crystallography , bragg's law , diffraction topography , crystallography , condensed matter physics , physics , chemistry , nanotechnology , computer science , programming language , layer (electronics)
The twin distribution in topological insulators Bi 2 Te 3 and Bi 2 Se 3 was imaged by electron backscatter diffraction (EBSD) and scanning X‐ray diffraction microscopy (SXRM). The crystal orientation at the surface, determined by EBSD, is correlated with the surface topography, which shows triangular pyramidal features with edges oriented in two different orientations rotated in the surface plane by 60°. The bulk crystal orientation is mapped out using SXRM by measuring the diffracted X‐ray intensity of an asymmetric Bragg peak using a nano‐focused X‐ray beam scanned over the sample. By comparing bulk‐ and surface‐sensitive measurements of the same area, buried twin domains not visible on the surface are identified. The lateral twin domain size is found to increase with the film thickness.