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Faceted growth of ()‐oriented GaN domains on an SiO 2 ‐patterned m ‐plane sapphire substrate using polarity inversion
Author(s) -
Yoon Hansub,
Jue Miyeon,
Jang Dongsoo,
Kim Chinkyo
Publication year - 2017
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576716015077
Subject(s) - sapphire , materials science , polarity (international relations) , optoelectronics , inversion (geology) , facet (psychology) , epitaxy , substrate (aquarium) , condensed matter physics , crystallography , physics , chemistry , nanotechnology , optics , laser , layer (electronics) , paleontology , biochemistry , structural basin , biology , cell , psychology , social psychology , oceanography , personality , big five personality traits , geology
Heteroepitaxial growth of ()‐oriented GaN domains on m ‐plane sapphire is energetically unfavourable in comparison with that of ()‐oriented GaN domains, but the faceted domains with ()‐oriented GaN reveal a more m ‐facet‐dominant configuration than ()‐oriented GaN in such a way that the quantum‐confined Stark effect can be more effectively suppressed. It is reported here, for the first time, that semipolar ()‐oriented and faceted GaN domains can be grown on an SiO 2 ‐patterned m ‐plane sapphire substrate by employing polarity inversion of initially nucleated ()‐oriented GaN domains. This polarity inversion of semipolar GaN was found to occur when the domains were grown with a 20–37.5 times higher V/III ratio and 70 K lower growth temperature than corresponding parameters for polarity‐not‐inverted domains. This work opens up a new possibility of effective suppression of the quantum‐confined Stark effect by polarity‐controlled semipolar GaN in an inexpensive manner in comparison with homoepitaxial growth of ()‐oriented GaN on a GaN substrate.