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Lattice strain and tilt mapping in stressed Ge microstructures using X‐ray Laue micro‐diffraction and rainbow filtering
Author(s) -
Tardif Samuel,
Gassenq Alban,
Guilloy Kevin,
Pauc Nicolas,
Osvaldo Dias Guilherme,
Hartmann Jean-Michel,
Widiez Julie,
Zabel Thomas,
Marin Esteban,
Sigg Hans,
Faist Jérôme,
Chelnokov Alexei,
Reboud Vincent,
Calvo Vincent,
Micha Jean-Sébastien,
Robach Odile,
Rieutord François
Publication year - 2016
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576716010347
Subject(s) - diffraction , materials science , x ray crystallography , optics , lattice (music) , infinitesimal strain theory , tensor (intrinsic definition) , lattice constant , strain (injury) , crystallography , physics , geometry , chemistry , thermodynamics , finite element method , mathematics , acoustics , medicine
Laue micro‐diffraction and simultaneous rainbow‐filtered micro‐diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub‐micrometre scale in highly strained, suspended Ge micro‐devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. The measurements were performed in a series of micro‐devices under either uniaxial or biaxial stress and an excellent agreement with numerical simulations was found. This shows the superior potential of Laue micro‐diffraction for the investigation of highly strained micro‐devices.