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Hybrid reciprocal lattice: application to layer stress determination in GaAlN/GaN(0001) systems with patterned substrates
Author(s) -
Domagała Jarosław Z.,
Morelhão Sérgio L.,
Sarzyński Marcin,
Maździarz Marcin,
Dłużewski Paweł,
Leszczyński Michał
Publication year - 2016
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576716004441
Subject(s) - epitaxy , materials science , optoelectronics , diffractometer , reflection (computer programming) , semiconductor , lattice (music) , reciprocal lattice , high resolution , layer (electronics) , nanotechnology , optics , composite material , computer science , diffraction , physics , scanning electron microscope , acoustics , programming language , remote sensing , geology
Epitaxy of semiconductors is a process of tremendous importance in applied science and in the optoelectronics industry. The control of defects introduced during epitaxial growth is a key point in manufacturing devices of high efficiency and durability. In this work, it is demonstrated how useful hybrid reflections are for the study of epitaxial structures with anisotropic strain gradients due to patterned substrates. High accuracy in detecting and distinguishing elastic and plastic relaxations is one of the greatest advantages of measuring this type of reflection, as well as the fact that the method can be exploited in a symmetric reflection geometry on a commercial high‐resolution diffractometer.