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Detection of an ordered‐structure fraction in amorphous silicon
Author(s) -
Wang Xiao-Dong,
Chen Bo,
Wang Hai-Feng,
Zheng Xin,
Liu Shi-Jie,
Wang Jun-Bo,
Li Bo,
Yu Shan-Meng,
Cui Zhong-Xu
Publication year - 2016
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576716002545
Subject(s) - amorphous solid , materials science , silicon , amorphous silicon , ellipsometry , sputter deposition , range (aeronautics) , sputtering , analytical chemistry (journal) , fraction (chemistry) , crystallography , crystalline silicon , optoelectronics , thin film , nanotechnology , chemistry , composite material , organic chemistry , chromatography
Amorphous silicon (a‐Si) films were prepared by radio frequency magnetron sputtering. Spectroscopic ellipsometry (SE) was utilized to detect an ordered‐structure fraction in a‐Si. The SE analysis of a‐Si films with different thicknesses (7.0–140.0 nm) demonstrates that no more than 2.81% of medium‐range order exists in the samples, and interestingly, there is a thickness dependence of optical constants for a‐Si in the range of 1.5–5.0 eV.