Premium
Monoclinic M A domains in anisotropically strained ferroelectric K 0.75 Na 0.25 NbO 3 films on (110) TbScO 3 grown by MOCVD
Author(s) -
Schwarzkopf Jutta,
Braun Dorothee,
Hanke Michael,
Kwasniewski Albert,
Sellmann Jan,
Schmidbauer Martin
Publication year - 2016
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576716000182
Subject(s) - monoclinic crystal system , ferroelectricity , piezoresponse force microscopy , materials science , crystallography , condensed matter physics , anisotropy , polarization (electrochemistry) , crystal structure , optics , physics , chemistry , dielectric , optoelectronics
A highly regular one‐dimensional domain pattern is formed in ferroelectric K 0.75 Na 0.25 NbO 3 thin films grown on (110) TbScO 3 substrates using metal–organic chemical vapour deposition (MOCVD). The domain pattern exhibits a lateral periodicity of about 50 nm and extends over several micrometres. The monoclinic symmetry of the domains is controlled by the elastic anisotropy of K 0.75 Na 0.25 NbO 3 and the anisotropic lattice strain, which is highly compressive in one in‐plane direction and weakly tensile in the corresponding orthogonal direction. Using piezoresponse force microscopy and X‐ray diffraction, the monoclinic M A phase is identified, which is associated with both a strong vertical and a lateral electric polarization component. The lateral component of the polarization vector is collinear with the ±[10] pc shear direction of the pseudocubic unit cell of the film and changes periodically by 180° in adjacent domains. A structural variant of a 90° rotated M A domain pattern, where the monoclinic distortion of the pseudocubic unit cells occurs along ±[110] pc , is also observed. However, this variant appears with significantly lower probability, in agreement with energy considerations based on linear elasticity theory. Thus, the incorporation of highly anisotropic lattice strain provides the opportunity to grow one‐dimensional nanostructures with high ferroelectric properties.