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X‐ray nanodiffraction analysis of stress oscillations in a W thin film on through‐silicon via
Author(s) -
Todt J.,
Hammer H.,
Sartory B.,
Burghammer M.,
Kraft J.,
Daniel R.,
Keckes J.,
Defregger S.
Publication year - 2016
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576715023419
Subject(s) - materials science , synchrotron , residual stress , silicon , diffraction , stress (linguistics) , composite material , optics , x ray , blanket , crystallography , metallurgy , physics , chemistry , linguistics , philosophy
Synchrotron X‐ray nanodiffraction is used to analyse residual stress distributions in a 200 nm‐thick W film deposited on the scalloped inner wall of a through‐silicon via. The diffraction data are evaluated using a novel dedicated methodology which allows the quantification of axial and tangential stress components under the condition that radial stresses are negligible. The results reveal oscillatory axial stresses in the range of ∼445–885 MPa, with a distribution that correlates well with the scallop wavelength and morphology, as well as nearly constant tangential stresses of ∼800 MPa. The discrepancy with larger stress values obtained from a finite‐element model, as well as from a blanket W film, is attributed to the morphology and microstructural nature of the W film in the via.