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Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X‐ray diffraction setup
Author(s) -
Ping Wang Yan,
Letoublon Antoine,
Nguyen Thanh Tra,
Bahri Mounib,
Largeau Ludovic,
Patriarche Gilles,
Cornet Charles,
Bertru Nicolas,
Le Corre Alain,
Durand Olivier
Publication year - 2015
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576715009954
Subject(s) - materials science , silicon , transmission electron microscopy , context (archaeology) , diffraction , crystallography , semiconductor , crystallographic defect , optoelectronics , optics , nanotechnology , chemistry , physics , paleontology , biology
This study is carried out in the context of III–V semiconductor monolithic integration on silicon for optoelectronic device applications. X‐ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown on Si. GaP has been chosen as the interfacial layer, owing to its low lattice mismatch with Si. But, microtwins and antiphase boundaries are still difficult to avoid in this system. Absolute quantification of the microtwin volume fraction is used for optimization of the growth procedure in order to eliminate these defects. Lateral correlation lengths associated with mean antiphase boundary distances are then evaluated. Finally, optimized growth conditions lead to the annihilation of antiphase domains within the first 10 nm.