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Element‐specific structural analysis of Si/B 4 C using resonant X‐ray reflectivity
Author(s) -
Nayak Maheswar,
Pradhan P. C.,
Lodha G. S.
Publication year - 2015
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576715005877
Subject(s) - materials science , x ray reflectivity , silicon , scattering , resonance (particle physics) , reflectivity , chemical composition , analytical chemistry (journal) , spectroscopy , optics , thin film , molecular physics , chemistry , optoelectronics , atomic physics , nanotechnology , physics , organic chemistry , chromatography , quantum mechanics
Element‐specific structural analysis at the buried interface of a low electron density contrast system is important in many applied fields. The analysis of nanoscaled Si/B 4 C buried interfaces is demonstrated using resonant X‐ray reflectivity. This technique combines information about spatial modulations of charges provided by scattering, which is further enhanced near the resonance, with the sensitivity to electronic structure provided by spectroscopy. Si/B 4 C thin‐film structures are studied by varying the position of B 4 C in Si layers. Measured values of near‐edge optical properties are correlated with the resonant reflectivity profile to quantify the element‐specific composition. It is observed that, although Si/B 4 C forms a smooth interface, there are chemical changes in the sputtered B 4 C layer. Nondestructive quantification of the chemical changes and the spatial distribution of the constituents is reported.