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AniCryDe : calculation of elastic properties in silicon and germanium crystals
Author(s) -
Camattari Riccardo,
Lanzoni Luca,
Bellucci Valerio,
Guidi Vincenzo
Publication year - 2015
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576715005087
Subject(s) - germanium , materials science , crystallography , silicon , anisotropy , curvature , elastic modulus , orientation (vector space) , wafer , stiffness , shear modulus , crystal (programming language) , modulus , displacement (psychology) , geometry , optics , computer science , composite material , physics , nanotechnology , mathematics , optoelectronics , chemistry , psychology , psychotherapist , programming language
A code to calculate the anisotropic elastic properties in a silicon or germanium crystal is introduced. The program, named AniCryDe , allows the user to select the crystallographic configuration of interest. For the selected crystallographic orientation, AniCryDe calculates several key mechanical parameters, such as Young's modulus, Poisson's ratio and the shear modulus. Furthermore, the program displays both the compliance and the stiffness tensors concerning the crystallographic orientation of interest. The code enables the user to set several parameters through a user‐friendly control stage. As a result, the user obtains the complete displacement field of a deformed crystal and the curvature of any crystallographic plane. Manufacturing wafer defects such as miscut and misflat angle are also taken into account.