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In situ defect annealing of swift heavy ion irradiated CeO 2 and ThO 2 using synchrotron X‐ray diffraction and a hydrothermal diamond anvil cell
Author(s) -
Palomares Raul I.,
Tracy Cameron L.,
Zhang Fuxiang,
Park Changyong,
Popov Dmitry,
Trautmann Christina,
Ewing Rodney C.,
Lang Maik
Publication year - 2015
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s160057671500477x
Subject(s) - annealing (glass) , irradiation , materials science , synchrotron radiation , swift heavy ion , synchrotron , analytical chemistry (journal) , in situ , diffraction , hydrothermal circulation , diamond anvil cell , x ray crystallography , ion , chemistry , metallurgy , optics , chemical engineering , nuclear physics , physics , organic chemistry , fluence , chromatography , engineering
Hydrothermal diamond anvil cells (HDACs) provide facile means for coupling synchrotron X‐ray techniques with pressure up to 10 GPa and temperature up to 1300 K. This manuscript reports on an application of the HDAC as an ambient‐pressure sample environment for performing in situ defect annealing and thermal expansion studies of swift heavy ion irradiated CeO 2 and ThO 2 using synchrotron X‐ray diffraction. The advantages of the in situ HDAC technique over conventional annealing methods include rapid temperature ramping and quench times, high‐resolution measurement capability, simultaneous annealing of multiple samples, and prolonged temperature and apparatus stability at high temperatures. Isochronal annealing between 300 and 1100 K revealed two‐stage and one‐stage defect recovery processes for irradiated CeO 2 and ThO 2 , respectively, indicating that the morphology of the defects produced by swift heavy ion irradiation of these two materials differs significantly. These results suggest that electronic configuration plays a major role in both the radiation‐induced defect production and high‐temperature defect recovery mechanisms of CeO 2 and ThO 2 .