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High‐temperature Raman spectroscopy of microstructure around the growing β‐BaB 2 O 4 crystal in the BaO–B 2 O 3 –Na 2 O system
Author(s) -
Liu Shanshan,
Zhang Guochun,
Wan Songming,
Jiang Xingxing,
Wang Yuanyuan,
Lin Zheshuai,
Wu Yicheng
Publication year - 2014
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s160057671400377x
Subject(s) - raman spectroscopy , microstructure , crystallography , boron , crystal (programming language) , crystal habit , spectroscopy , crystal growth , materials science , analytical chemistry (journal) , chemistry , crystallization , optics , physics , chromatography , programming language , organic chemistry , quantum mechanics , computer science
High‐temperature Raman spectroscopy has been applied to study in situ the microstructure of the solution near the β‐BaB 2 O 4 crystal–solution interface in the BaO–B 2 O 3 –Na 2 O growth system. A boundary layer near the crystal–solution interface was observed. In accordance with the high‐temperature Raman spectroscopy and first principles calculations, a boron–oxygen structural model is proposed to explain the microstructure of the solution and growth habit. The results show that the growth solution contains a special group, [BO 2 ØBOØB=O] 3− (Ø = bridging oxygen), which transformed to the growth unit [B 3 O 6 ] 3− near the interface.