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Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy
Author(s) -
Kopp Viktor S.,
Kaganer Vladimir M.,
Jenichen Bernd,
Brandt Oliver
Publication year - 2014
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576713032639
Subject(s) - reciprocal lattice , perpendicular , dislocation , materials science , molecular beam epitaxy , condensed matter physics , epitaxy , reflection (computer programming) , crystallography , optics , lattice (music) , molecular physics , diffraction , physics , geometry , chemistry , nanotechnology , layer (electronics) , mathematics , computer science , acoustics , programming language
The reciprocal space map of a heteroepitaxial single‐crystal GaN(0001) film on 6H‐SiC(0001) is analyzed. The film contains a high density of threading dislocations which intersect the film parallel to the surface normal. The strain field associated with these dislocations is expected to broaden all reciprocal lattice points to discs perpendicular to the dislocation lines, i.e. parallel to the surface. Experimentally, however, the reflection is observed to be broadened also perpendicular to the surface and is rotated towards the surface normal. Using Monte Carlo simulations, it is shown that both of these features are a natural consequence of the presence of misfit dislocations at the film/substrate interface.