Gallium  K ‐edge EXAFS measurements on cubic and hexagonal GaN | Zendy

Katsikini M. | Zendy; Rossner H. | Zendy; FieberErdmann M. | Zendy; HolubKrappe E. | Zendy; Moustakas T. D. | Zendy; Paloura E. C. | Zendy

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Gallium K ‐edge EXAFS measurements on cubic and hexagonal GaN

Author(s) -

Katsikini M.,

Rossner H.,

FieberErdmann M.,

HolubKrappe E.,

Moustakas T. D.,

Paloura E. C.

Publication year - 1999

Publication title -

journal of synchrotron radiation

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.172

H-Index - 99

ISSN - 1600-5775

DOI - 10.1107/s090904959900151x

Subject(s) - gallium , extended x ray absorption fine structure , materials science , hexagonal crystal system , microstructure , relaxation (psychology) , lattice (music) , enhanced data rates for gsm evolution , crystallography , atom (system on chip) , shell (structure) , k nearest neighbors algorithm , condensed matter physics , molecular physics , chemistry , absorption spectroscopy , physics , optics , telecommunications , metallurgy , psychology , social psychology , artificial intelligence , acoustics , embedded system , composite material , computer science

The microstructure of undoped cubic and hexagonal GaN films is studied using temperature dependent Ga K-edge EXAFS measurements (10K-290K). The microstructure around the Ga atom is distorted due to a splitting of the second nearest neighbor shell, which consists of Ga atoms. This splitting results in an additional Ga path at a distance longer than expected by 0.8±0.05 A and is attributed to local lattice relaxation around nitrogen vacancies. From the temperature dependence of the DW factors for the 2 nd nearest neighbor shell of Ga, the Einstein temperature is equal to 318±25K.

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