Open AccessCobalt silicide formation on 6H silicon carbide
Author(s) -
Porto A. O.,
Boyanov B. I.,
Sayers D. E.,
Nemanich R. J.
Publication year - 1999
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049599001326
Subject(s) - x ray absorption fine structure , cobalt , materials science , annealing (glass) , silicide , carbide , silicon carbide , metal , epitaxy , wafer , silicon , molecular beam epitaxy , crystallography , nanotechnology , chemical engineering , metallurgy , chemistry , spectroscopy , physics , layer (electronics) , quantum mechanics , engineering
Cobalt films (1, 25 and 100 A) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-800°C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 A Co films. In the 25 and 100 A Co films only Co-Co bonds were identified. The XRD pattern of the 100 A Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 800°C.