Cobalt silicide formation on 6H silicon carbide | Zendy

Porto A. O. | Zendy; Boyanov B. I. | Zendy; Sayers D. E. | Zendy; Nemanich R. J. | Zendy

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Cobalt silicide formation on 6H silicon carbide

Author(s) -

Porto A. O.,

Boyanov B. I.,

Sayers D. E.,

Nemanich R. J.

Publication year - 1999

Publication title -

journal of synchrotron radiation

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.172

H-Index - 99

ISSN - 1600-5775

DOI - 10.1107/s0909049599001326

Subject(s) - x ray absorption fine structure , cobalt , materials science , annealing (glass) , silicide , carbide , silicon carbide , metal , epitaxy , wafer , silicon , molecular beam epitaxy , crystallography , nanotechnology , chemical engineering , metallurgy , chemistry , spectroscopy , physics , layer (electronics) , quantum mechanics , engineering

Cobalt films (1, 25 and 100 A) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-800°C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 A Co films. In the 25 and 100 A Co films only Co-Co bonds were identified. The XRD pattern of the 100 A Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 800°C.

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