Open AccessEdge‐jump inversion in the Si L 3,2 ‐edge optical XAFS of porous silicon
Author(s) -
Sham T. K.,
Coulthard I.
Publication year - 1999
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049599001314
Subject(s) - x ray absorption fine structure , silicon , enhanced data rates for gsm evolution , jump , materials science , inversion (geology) , porous silicon , optoelectronics , geology , computer science , physics , telecommunications , spectroscopy , paleontology , quantum mechanics , structural basin
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