Open AccessXAFS study on D + irradiated Si surface
Author(s) -
Yoshida T.,
Yoshida H.,
Hara T.,
Sakai M.,
Omori A.,
Tanabe T.
Publication year - 1999
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049598018196
Subject(s) - x ray absorption fine structure , irradiation , radiochemistry , materials science , chemistry , physics , nuclear physics , spectroscopy , quantum mechanics
Si K-edge XANES recorded in a total electron yield mode was applied to characterize silicon samples irradiated by deuterium ions accelerated to 5 and 15 keV. In XANES of samples irradiated at 5 keV, peaks showing the formation of displaced atoms and Si-D bonds were observed. For samples irradiated at 15 keV, such a appreciable change was not observed, indicating that the accumulations of defects and implanted deuterium are mostly out of the analyzing depth of XANES. Thus, XANES successfully distinguished deuterium irradiated samples with the difference in the depth distribution of implanted deuterium and produced damages.