Nitrogen  K ‐edge EXAFS measurements on Mg‐ and Si‐doped GaN | Zendy

Katsikini M. | Zendy; Moustakas T. D. | Zendy; Paloura E. C. | Zendy

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Nitrogen K ‐edge EXAFS measurements on Mg‐ and Si‐doped GaN

Author(s) -

Katsikini M.,

Moustakas T. D.,

Paloura E. C.

Publication year - 1999

Publication title -

journal of synchrotron radiation

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.172

H-Index - 99

ISSN - 1600-5775

DOI - 10.1107/s0909049598014423

Subject(s) - extended x ray absorption fine structure , doping , nitrogen , enhanced data rates for gsm evolution , materials science , k edge , crystallography , chemistry , analytical chemistry (journal) , optoelectronics , physics , absorption spectroscopy , optics , computer science , environmental chemistry , organic chemistry , telecommunications

EXAFS measurements at the N K-edge are used to study the microstructure of nand p-type GaN doped with Si and Mg, respectively. In undoped and Mg-doped GaN the nitrogen atom is four-fold coordinated with n (where 2.9

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