Open AccessNitrogen K ‐edge EXAFS measurements on Mg‐ and Si‐doped GaN
Author(s) -
Katsikini M.,
Moustakas T. D.,
Paloura E. C.
Publication year - 1999
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049598014423
Subject(s) - extended x ray absorption fine structure , doping , nitrogen , enhanced data rates for gsm evolution , materials science , k edge , crystallography , chemistry , analytical chemistry (journal) , optoelectronics , physics , absorption spectroscopy , optics , computer science , environmental chemistry , organic chemistry , telecommunications
EXAFS measurements at the N K-edge are used to study the microstructure of nand p-type GaN doped with Si and Mg, respectively. In undoped and Mg-doped GaN the nitrogen atom is four-fold coordinated with n (where 2.9