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A uniformly cleaved epitaxically grown diamond crystal for synchrotron radiation
Author(s) -
Shinohara Armando H.,
Kamo Mutsukazu,
Suzuki Carlos K.
Publication year - 1998
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049598000867
Subject(s) - diamond , chemical vapor deposition , synchrotron radiation , materials science , crystal (programming language) , synchrotron , optics , substrate (aquarium) , bending , microwave , x ray , crystallography , optoelectronics , chemistry , physics , composite material , geology , oceanography , quantum mechanics , computer science , programming language
A homoepitaxic single‐crystal diamond (111) film grown by microwave‐assisted chemical vapour deposition (CVD) and fractured along the [110] directions to form small triangles was investigated by X‐ray double‐crystal topography. The X‐ray topographic image showed that all parts of the cleaved CVD diamond film sections uniformly reflected X‐rays at the peak position of the rocking curve, which was measured in the Bragg case. Furthermore, no bending effect was observed and the CVD diamond film appeared to be more perfect than and showed higher integrated intensity than the natural diamond substrate.

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