Open AccessCharacterization and interpretation of the quantum efficiencies of multilayer semiconductor detectors using a new theory
Author(s) -
Cho T.,
Hirata M.,
Kohagura J.,
Sakamoto Y.,
Okamura T.,
Numakura T.,
Minami R.,
Nishizawa Y.,
Sasuga T.,
Tamano T.,
Yatsu K.,
Miyoshi S.,
Tanaka S.,
Sato K.,
Saitoh Y.,
Hirano K.,
Maezawa H.
Publication year - 1998
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049598000016
Subject(s) - detector , semiconductor , semiconductor detector , synchrotron radiation , physics , photon , optoelectronics , optics , particle detector , radiation
On the basis of a new theory of semiconductor X‐ray detector response, a new type of multilayer semiconductor detector was designed and developed for convenient energy analyses of intense incident X‐ray flux in a cumulative‐current mode. Another anticipated useful property of the developed detector is a drastic improvement in high‐energy X‐ray response ranging over several hundred eV. The formula for the quantum efficiency of multilayer semiconductor detectors and its physical interpretations are proposed and have been successfully verified by synchrotron radiation experiments at the Photon Factory. These detectors are useful for data analyses under strong radiation‐field conditions, including fusion‐plasma‐emitting X‐rays and energetic heavy‐particle beams, without the use of high‐bias applications.