Open AccessDeep X‐ray lithography with a tunable wavelength shifter at CAMD
Author(s) -
Khan Malek C.,
Saile V.,
Manohara H.,
Craft B.
Publication year - 1998
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049597019547
Subject(s) - lithography , resist , x ray lithography , materials science , wavelength , optics , extreme ultraviolet lithography , optoelectronics , radiation , next generation lithography , x ray , photolithography , photon , physics , electron beam lithography , nanotechnology , layer (electronics)
An additional X‐ray lithography facility is under construction at the Center for Advanced Microstructures and Devices. It will receive radiation from a 7.5 T superconducting three‐pole wavelength shifter. The critical energy of the insertion device is tunable up to a maximum value of 11.2 keV, allowing for optimization of photon spectra to resist thickness. In particular, this hard X‐ray source will allow investigation of X‐ray lithography at very high energies for devices with thicknesses in excess of 1 mm, and study of low‐cost mass‐production concepts, using simultaneously exposed stacks of resist layers.