Open AccessLocal structure study of dilute Er in III–V semiconductors by fluorescence EXAFS
Author(s) -
Ofuchi H.,
Kawamura D.,
Tsuchiya J.,
Matsubara N.,
Tabuchi M.,
Fujiwara Y.,
Takeda Y.
Publication year - 1998
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049597018566
Subject(s) - extended x ray absorption fine structure , fluorescence , semiconductor , chemistry , materials science , physics , optoelectronics , optics , absorption spectroscopy
For understanding the luminescence of Er atoms in III–V semiconductors, OMVPE‐grown InP doped with Er has been investigated by fluorescence EXAFS (extended X‐ray absorption fine structure) in order to study the local structure around Er atoms. The local structures around the Er atoms doped in InP, with doping as dilute as 3 × 10 12 Er atoms in a 1.5 mm × 1.0 mm spot, were successfully measured by fluorescence EXAFS. The EXAFS analysis revealed that the Er atoms doped in InP above 853 K (which showed low luminescence) formed the rock‐salt‐structure ErP, while the Er atoms doped in InP below 823 K (which showed high luminescence) substituted on the In site of InP. The dependence of the local structure on growth temperature was observed for the samples doped with 3 × 10 12 atoms and 1.2 × 10 13 atoms of Er.