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XAFS spectra from reflectivity measurements
Author(s) -
Tani Katsuhiko,
Nanjyo Takeshi,
Masui Shin,
Saisho Hideo
Publication year - 1998
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049597017597
Subject(s) - x ray absorption fine structure , refractive index , reflectivity , materials science , absorption (acoustics) , absorption edge , dispersion (optics) , optics , reflection (computer programming) , thin film , analytical chemistry (journal) , chemistry , physics , optoelectronics , spectroscopy , band gap , nanotechnology , chromatography , quantum mechanics , computer science , programming language
The reflectivity of TiSi 2 films was measured as a function of photon energy E at the Ti K ‐edge region at a glancing angle θ close to the critical angle θ C of total reflection. TiSi 2 silicide films (about 30 nm thickness) were prepared by silicidation of Ti thin films deposited on Si(001) substrates. Since the Fresnel reflectivity R (θ, E ) is a function of the dispersion δ( E ) and of the absorption β( E ), the absorption β( E ) which carries the XAFS signal can be solved as β(θ,δ, R ) for observed reflectivity R and for estimated δ. The dispersion δ( E ) is related to the absorption β( E ) by the Kramers–Kronig (K–K) relations since the refractive index is n ( E ) = 1 −δ( E ) − i β( E ). β( E ) was calculated from the observed reflectivity R (θ, E ) using theoretical values for initial δ( E ). Titanium K ‐edge XAFS for TiSi 2 was extracted from the reflectivity by `ReflXAFS'.

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