Open AccessNew methods for semiconductor charge‐diffusion‐length measurements using synchrotron radiation
Author(s) -
Kohagura J.,
Cho T.,
Hirata M.,
Okamura T.,
Tamano T.,
Yatsu K.,
Miyoshi S.,
Hirano K.,
Maezawa H.
Publication year - 1998
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049597017524
Subject(s) - detector , semiconductor , synchrotron radiation , semiconductor detector , wafer , physics , diffusion , optoelectronics , silicon , semiconductor device , photon , particle detector , optics , materials science , nanotechnology , layer (electronics) , thermodynamics
The extension of a new theory on the X‐ray energy response of semiconductor detectors is carried out to characterize the X‐ray response of a multichannel semiconductor detector fabricated on one silicon wafer. Recently, these multichannel detectors have been widely utilized for position‐sensitive observations in various research fields, including synchrotron radiation research and fusion‐plasma investigations. This article represents the verification of the physics essentials of a proposed theory on the X‐ray response of semiconductor detectors. The three‐dimensional charge‐diffusion effects on the adjoining detector‐channel signals are experimentally demonstrated at the Photon Factory for two types of multichannel detectors. These findings are conveniently applicable for measuring diffusion lengths for industrial requirements.