Open AccessOn the Off‐Bragg Reflectivity Enhancement in Dynamical Multiple Diffraction of X‐rays by an In 0.5 Ga 0.5 P/GaAs Heteroepitaxial Structure
Author(s) -
Kovalchuk M. V.,
Kreines A. Ya.,
Samoilova L. V.,
Mel'nikov A. M.
Publication year - 1997
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049597001453
Subject(s) - reflection (computer programming) , diffraction , bragg's law , synchrotron radiation , optics , materials science , substrate (aquarium) , reflectivity , amplitude , excitation , synchrotron , intensity (physics) , bragg peak , optoelectronics , physics , geology , oceanography , quantum mechanics , computer science , programming language , beam (structure)
The effect of dynamical interactions between reflections involved in 000/111/220 multiple diffraction by an In 0.5 Ga 0.5 P/GaAs heteroepitaxial structure was observed, which significantly increases the intensity of the (111) reflection in the region of the total (220) reflection from the substrate during Renninger‐like scanning. The amplitude of the peak is roughly five times as great as the peak of detoured excitation for ideal GaAs. Possible applications of the observed feature in synchrotron‐radiation‐based studies are discussed.