Open AccessX‐ray Reflectivity Study of Semiconductor Interfaces
Author(s) -
Sanyal M. K.,
Datta A.,
Banerjee S.,
Srivastava A. K.,
Arora B. M.,
Kanakaraju S.,
Mohan S.
Publication year - 1997
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049596015312
Subject(s) - reflectivity , semiconductor , materials science , optics , x ray reflectivity , optoelectronics , physics
The results of an X‐ray reflectivity study of thick AlAs–AlGaAs and thin Ge–Si–Ge multilayers grown using metal‐organic vapour‐phase epitaxy and ion‐beam sputtering deposition techniques, respectively, are presented. Asymmetry in interfaces is observed in both of these semiconductor multilayers. It is also observed that although the Si‐on‐Ge interface is sharp, an Si 0.4 Ge 0.6 alloy is formed at the Ge‐on‐Si interface. In the case of the III‐V semiconductor, the AlAs‐on‐AlGaAs interface shows much greater roughness than that observed in the AlGaAs‐on‐AlAs interface. For thin multilayers it is demonstrated that the compositional profile as a function of depth can be obtained directly from the X‐ray reflectivity data.