Open AccessPIN Silicon Diodes as EXAFS Signal Detectors
Author(s) -
Dalba G.,
Fornasini P.,
Soldo Y.,
Rocca F.
Publication year - 1996
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049596006073
Subject(s) - photodiode , extended x ray absorption fine structure , diode , synchrotron radiation , materials science , silicon , optoelectronics , diffraction , pin diode , optics , detector , x ray detector , ionization , physics , absorption spectroscopy , ion , quantum mechanics
The properties of PIN silicon diodes as X‐ray detectors for EXAFS measurements with synchrotron radiation have been investigated. Electronic stability, linearity and noise current have been analyzed. The effects of diffraction peaks resulting from the crystalline nature of the diodes have been minimized by mounting the diodes on a simple device that continuously changes its orientation by a few degrees with respect to the X‐ray beam. An accurate comparison between EXAFS signals monitored by ionization chambers and PIN photodiodes is presented. It is shown that good‐quality EXAFS measurements with PIN photodiodes are possible if diffraction effects are eliminated.