Open AccessIn Situ Detection of Surface SiH n in Synchrotron‐Radiation‐Induced Chemical Vapor Deposition of a ‐Si on an SiO 2 Substrate
Author(s) -
Yoshigoe A.,
Nagasono M.,
Mase K.,
Urisu T.,
Seki S.,
Nakagawa Y.
Publication year - 1995
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049595006091
Subject(s) - synchrotron radiation , chemical vapor deposition , substrate (aquarium) , analytical chemistry (journal) , amorphous solid , deposition (geology) , silicon , irradiation , materials science , infrared , hydride , infrared spectroscopy , synchrotron , chemistry , optics , optoelectronics , metal , crystallography , environmental chemistry , paleontology , oceanography , physics , organic chemistry , sediment , nuclear physics , metallurgy , biology , geology
The sensitivity and linearity of infrared reflection absorption spectroscopy (IRAS) has been significantly improved by using a buried‐metal‐layer (BML) substrate having an SiO 2 (15 nm)/Al(200 nm)/Si(100) structure, instead of a plain Si(100) substrate. By applying this BML‐IRAS technique to the in situ observation of synchrotron‐radiation‐induced chemical vapor deposition of amorphous Si ( a ‐Si) on an SiO 2 surface using Si 2 H 6 gas, the vibrational spectra of surface SiH n species in this reaction system have been observed for the first time with sufficient sensitivity for submonolayer coverage. The main silicon hydride species after deposition at 423 K are surface SiH 2 and SiH. Surface SiH 3 and SiH 2 are observed to be easily decomposed by synchrotron radiation irradiation. The decomposition rate of SiH by synchrotron radiation irradiation is much slower than those of SiH 2 and SiH 3 .