Open AccessInterference phenomena of synchrotron radiation in TEY spectra for silicon‐on‐insulator structure
Author(s) -
Andreeva M. A.,
Domashevskaya E. P.,
Odintsova E. E.,
Terekhov V. A.,
Turishchev S. Yu.
Publication year - 2012
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049512022844
Subject(s) - synchrotron radiation , spectral line , materials science , silicon , optics , xanes , radiation , interference (communication) , oscillation (cell signaling) , excitation , molecular physics , physics , optoelectronics , chemistry , channel (broadcasting) , biochemistry , electrical engineering , quantum mechanics , astronomy , engineering
The general matrix theory of the photoelectron/fluorescence excitation in anisotropic multilayer films at the total reflection condition of X‐rays has been developed. In a particular case the theory has been applied to explain the oscillation structure of L 2,3 XANES spectra for a SiO 2 /Si/SiO 2 /c‐Si sample in the pre‐edge region which has been observed by a sample current technique at glancing angles of synchrotron radiation. Remarkably the phase of the oscillations is reversed by a ∼2° angle variation. The observed spectral features are found to be a consequence of waveguide mode creation in the middle layer of strained Si, which changes the radiation field amplitude in the top SiO 2 layer. The fit of the data required the correction of the optical constants for Si and SiO 2 near the Si L 2,3 ‐edges.