Open AccessA scanning Kelvin probe for synchrotron investigations: the in situ detection of radiation‐induced potential changes
Author(s) -
Salgin Bekir,
Vogel Dirk,
Pontoni Diego,
Schröder Heiko,
Schönberger Bernd,
Stratmann Martin,
Reichert Harald,
Rohwerder Michael
Publication year - 2012
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049511047066
Subject(s) - synchrotron radiation , kelvin probe force microscope , sapphire , synchrotron , irradiation , characterization (materials science) , in situ , materials science , scattering , radiation , beam (structure) , work (physics) , optics , analytical chemistry (journal) , chemistry , nanotechnology , physics , nuclear physics , laser , atomic force microscopy , thermodynamics , organic chemistry , chromatography
A wide range of high‐performance X‐ray surface/interface characterization techniques are implemented nowadays at every synchrotron radiation source. However, these techniques are not always `non‐destructive' because possible beam‐induced electronic or structural changes may occur during X‐ray irradiation. As these changes may be at least partially reversible, an in situ technique is required for assessing their extent. Here the integration of a scanning Kelvin probe (SKP) set‐up with a synchrotron hard X‐ray interface scattering instrument for the in situ detection of work function variations resulting from X‐ray irradiation is reported. First results, obtained on bare sapphire and sapphire covered by a room‐temperature ionic liquid, are presented. In both cases a potential change was detected, which decayed and vanished after switching off the X‐ray beam. This demonstrates the usefulness of a SKP for in situ monitoring of surface/interface potentials during X‐ray materials characterization experiments.