Open AccessTwo‐dimensional approach to fluorescence yield XANES measurement using a silicon drift detector
Author(s) -
Tamenori Y.,
Morita M.,
Nakamura T.
Publication year - 2011
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049511027531
Subject(s) - xanes , silicon , analytical chemistry (journal) , absorption (acoustics) , materials science , fluorescence , x ray fluorescence , detector , manganese , yield (engineering) , silicon drift detector , spectral line , chemistry , optics , optoelectronics , physics , chromatography , astronomy , metallurgy , composite material
The objective of this article is to describe the capability of a two‐dimensional (2D) approach to X‐ray absorption near‐edge structure (XANES) measurement by means of a partial fluorescence yield (PFY) method. 2D‐XANES measurements were achieved by using a silicon drift detector as an energy‐dispersive fluorescence detector. The advantage of this technique is that it allows full surveys of X‐ray fluorescence data that are lost in conventional PFY measurements. The availability of a map approach was demonstrated by applying it to XANES measurements in both a diluted (Mn‐doped nano‐diamond) and a concentrated (MnO crystal) manganese sample. The 2D approach clearly distinguished between the PFY spectra of Mn and O atoms, where absorption edges of both elements are close to each other. Further, the 2D approach extracted an unambiguous PFY spectrum of phosphorus in the XANES measurement of SS304 (P < 0.045 wt%).