Open AccessSynchrotron‐radiation‐stimulated etching of polydimethylsiloxane using XeF 2 as a reaction gas
Author(s) -
Chiang TsungYi,
Makimura Tetsuya,
He Tingchao,
Torii Shuichi,
Yoshida Tomoko,
Tero Ryugo,
Wang Changshun,
Urisu Tsuneo
Publication year - 2010
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049509045658
Subject(s) - etching (microfabrication) , polydimethylsiloxane , materials science , reactive ion etching , microfabrication , isotropic etching , silicon , dry etching , synchrotron radiation , analytical chemistry (journal) , wafer , optoelectronics , nanotechnology , chemistry , optics , fabrication , layer (electronics) , medicine , alternative medicine , physics , pathology , chromatography
The synchrotron radiation (SR) stimulated etching of silicon elastomer polydimethylsiloxane (PDMS) using XeF 2 as an etching gas has been demonstrated. An etching system with differential pumps and two parabolic focusing mirrors was constructed to perform the etching. The PDMS was found to be effectively etched by the SR irradiation under the XeF 2 gas flow, and the etching process was area‐selective and anisotropic. An extremely high etching rate of 40–50 µm (10 min) −1 was easily obtained at an XeF 2 gas pressure of 0.2–0.4 torr. This suggests that SR etching using XeF 2 gas provides a new microfabrication technology for thick PDMS membranes, which can open new applications such as the formation of three‐dimensional microfluidic circuits.