Open AccessLocal structure of uncapped and capped InGaN/GaN quantum dots
Author(s) -
PiskorskaHommel E.,
Schmidt Th.,
Siebert M.,
Yamaguchi T.,
Hommel D.,
Falta J.,
Cross J. O.
Publication year - 2009
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049509012345
Subject(s) - quantum dot , extended x ray absorption fine structure , indium , materials science , absorption (acoustics) , spectroscopy , optoelectronics , epitaxy , phase (matter) , absorption spectroscopy , crystallography , chemistry , nanotechnology , optics , physics , layer (electronics) , organic chemistry , quantum mechanics , composite material
The local structure around the indium atoms in uncapped and capped In x Ga 1− x N quantum dots has been studied by In K ‐edge extended X‐ray absorption fine structure (EXAFS) spectroscopy. The samples were grown by metal organic vapour phase epitaxy. The EXAFS was successfully applied to study the structural properties of buried quantum dots which are not optically active. The analysis revealed that capping the quantum dots with GaN does not affect the bond distances of the In—N and In—Ga, but makes the In—In distance shorter by 0.04 Å.