Open AccessSynchrotron‐radiation‐stimulated etching of SiO 2 thin films with a tungsten nano‐pillar mask
Author(s) -
Wang Changshun,
Zhang Xiaoqiang,
Urisu Tsuneo
Publication year - 2006
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049506037459
Subject(s) - tungsten , synchrotron radiation , etching (microfabrication) , materials science , irradiation , pillar , isotropic etching , silicon , nano , synchrotron , reactive ion etching , radiation , dry etching , optics , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , composite material , layer (electronics) , metallurgy , physics , structural engineering , engineering , chromatography , nuclear physics
A nano‐pattern of SiO 2 on a Si (100) surface has been demonstrated by synchrotron‐radiation‐stimulated etching with a tungsten nano‐pillar mask. The reaction gas was a mixture of SF 6 and O 2 . The mask was fabricated using a focused ion beam with W(CO) 6 as the source gas. The width and height of the tungsten nano‐pillar were ∼80 nm and 160 nm, respectively. Synchrotron radiation irradiation with flowing SF 6 and O 2 effectively etches the silicon dioxide, and the etching process followed the surface photochemical reaction. The etched surface was very flat, and no undercutting occurred during the etching process.