Open AccessSilicon avalanche photodiodes for direct detection of X‐rays
Author(s) -
Baron Alfred Q. R.,
Kishimoto Shunji,
Morse John,
Rigal JeanMarie
Publication year - 2006
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s090904950503431x
Subject(s) - avalanche photodiode , apds , silicon , detector , optoelectronics , single photon avalanche diode , synchrotron radiation , optics , photodiode , silicon photomultiplier , physics , x ray detector , materials science , emphasis (telecommunications) , computer science , telecommunications , scintillator
Silicon avalanche photodiodes (APDs) are discussed as fast X‐ray detectors for synchrotron radiation. The emphasis is on `direct' detection, where the X‐ray is absorbed within the silicon APD itself, and, therefore, on use with medium‐energy X‐rays, <30 keV. The impact of APD structure on device performance is examined, and representative data from many different commercial devices are presented. Specific areas discussed include signal shapes, high‐rate behavior, time resolution and pulse‐height response. Data from several APD arrays are also presented, as is a detailed description of an integrated package system. Tables are included comparing commercially available devices, including arrays.