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Semiconductor materials and radiation detection
Author(s) -
Owens Alan
Publication year - 2006
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049505033339
Subject(s) - particle detector , radiation , optoelectronics , infrared , materials science , gamma spectroscopy , semiconductor detector , nanotechnology , optics , engineering physics , detector , physics
While Si and Ge have become detection standards for X‐ray and γ‐ray spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by one or more of their physical limitations; namely the need for ancillary cooling systems or bulky cryogenics, their modest stopping powers and radiation intolerance. Wide band‐gap compounds offer the ability to operate in a range of chemical, thermal and radiation environments while still maintaining sub‐keV spectral resolution at X‐ray wavelengths. In addition, these materials encompass such a wide range of physical properties that it is technically feasible to engineer materials to specific applications. However, while compound materials are used routinely in the optical and infrared wave bands, their development at hard X‐ and γ‐ray wavelengths has been plagued by material and fabrication problems. In this paper an overview of suitable materials is presented and the current progress in producing X‐ and γ‐ray radiation detectors is reviewed.

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