Open AccessLowest limit for detection of impurity concentration in semiconductors by fluorescence XAFS: resonant Raman scattering and angle dependence
Author(s) -
Ofuchi H.,
Kyouzu H.,
Takahashi R.,
Tabuchi M.,
Takeda Y.
Publication year - 2005
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049505011003
Subject(s) - x ray absorption fine structure , impurity , raman scattering , raman spectroscopy , semiconductor , materials science , scattering , doping , x ray raman scattering , fluorescence , analytical chemistry (journal) , chemistry , optics , spectroscopy , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics
The lowest limit for detection (LLD) of the impurity concentration doped in semiconductors in the case of fluorescence XAFS measurements has been investigated as a function of the matrix of the impurity and the geometry of the measurement. When the impurity concentration is very low and other background noise is well suppressed, X‐ray resonant Raman scattering by the constituent atoms of the matrix remains as a major background for the fluorescence‐detected XAFS measurement. For example, in the fluorescence‐detected XAFS measurement for Er‐doped semiconductors at the Er L III ‐edge, the LLD of the Er concentration was about 5 × 10 14 to 1 × 10 15 cm −2 for GaAs and GaP, and lower than 1 × 10 14 cm −2 for InP. The resonant Raman scattering of Ga atoms in the host semiconductor determines the LLD.