Synchrotron X‐ray topography of electronic materials

Large‐area transmission, transmission section, large‐area back‐reflection, back‐reflection section and grazing‐incidence topography are the geometries used when recording high‐resolution X‐ray diffraction images with synchrotron radiation from a bending magnet, a wiggler or an undulator of an electron or a positron storage ring. Defect contrast can be kinematical, dynamical or orientational even in the topographs recorded on the same film at the same time. In this review article limited to static topography experiments, examples of defect studies on electronic materials cover the range from voids and precipitates in almost perfect float‐zone and Czochralski silicon, dislocations in gallium arsenide grown by the liquid‐encapsulated Czochralski technique, the vapour‐pressure controlled Czochralski technique and the vertical‐gradient freeze technique, stacking faults and micropipes in silicon carbide to misfit dislocations in epitaxic heterostructures. It is shown how synchrotron X‐ray topographs of epitaxic laterally overgrown gallium arsenide layer structures are successfully explained by orientational contrast.