Open AccessX‐ray absorption spectroscopy investigations on oxidized Ni/Au contacts to p ‐GaN
Author(s) -
Jan J. C.,
Asokan K.,
Chiou J. W.,
Pong W. F.,
Tseng P. K.,
Chen L. C.,
Chen F. R.,
Lee J. F.,
Wu J. S.,
Lin H. J.,
Chen C. T.
Publication year - 2001
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049501001911
Subject(s) - non blocking i/o , annealing (glass) , spectroscopy , materials science , dielectric spectroscopy , absorption spectroscopy , x ray absorption spectroscopy , analytical chemistry (journal) , x ray photoelectron spectroscopy , absorption (acoustics) , spectral line , chemistry , optics , nuclear magnetic resonance , electrochemistry , metallurgy , electrode , physics , biochemistry , quantum mechanics , chromatography , composite material , astronomy , catalysis
X‐ray absorption spectroscopy was used to investigate the electronic structure of as‐deposited and oxidized Ni/Au contacts to p ‐GaN and to elucidate the mechanism responsible for low impedance. X‐ray absorption near edge spectra of Ni K ‐ and L 3,2 ‐edges clearly indicate formation of NiO on the sample surface after annealing. The reason for low impedance may be attributed to increase in hole concentration and existence of p ‐NiO layer on the surface.