Open AccessXANES analyses of silicon crystalline irradiated by nitrogen/oxygen ions
Author(s) -
Yoshida Tomoko,
Hara Takanobu,
Ii Tatsuya,
Yoshida Hisao,
Tanabe Tetsuo
Publication year - 2001
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049500020902
Subject(s) - xanes , irradiation , silicon , materials science , silicon dioxide , ion , oxygen , nitrogen , analytical chemistry (journal) , silicon nitride , absorption (acoustics) , phase (matter) , radiochemistry , spectral line , chemistry , optoelectronics , environmental chemistry , metallurgy , physics , organic chemistry , astronomy , nuclear physics , composite material
X‐ray absorption techniques have been applied to the characterization of 5 keV nitrogen / oxygen ions implanted silicon samples. The depth selective measurement of XANES by recording in PEY mode and the quantitative analysis by superposition of XANES spectra were carried out to elucidate the depth profile of implanted ions. It has been revealed that the silicon nitride phase were formed in silicon after prolonged N + irradiation and it extended over the deep part of the damaged region from the surface. On the ther hand, for the O + irradiation, silicon dioxide phase were produced only in the shallow part of the damaged region, i.e., the silicon dioxide phase likely broke off during the irradiation.