Reflection mode XAFS investigations of reactively sputtered thin films | Zendy

LützenkirchenHecht Dirk | Zendy; Frahm Ronald | Zendy

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Reflection mode XAFS investigations of reactively sputtered thin films

Author(s) -

LützenkirchenHecht Dirk,

Frahm Ronald

Publication year - 2001

Publication title -

journal of synchrotron radiation

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.172

H-Index - 99

ISSN - 1600-5775

DOI - 10.1107/s0909049500019701

Subject(s) - x ray absorption fine structure , amorphous solid , materials science , thin film , sputtering , annealing (glass) , xanes , analytical chemistry (journal) , nitride , reflection (computer programming) , boron nitride , spectral line , chemistry , metallurgy , crystallography , spectroscopy , composite material , nanotechnology , physics , chromatography , quantum mechanics , astronomy , computer science , programming language , layer (electronics)

Amorphous Ta‐oxide and Sn‐nitride thin films were prepared by reactive sputter deposition on smooth float glass substrates and investigated ex situ using reflection mode XAFS. The absorption coefficient μ and its fine structure were extracted from the measured reflection mode XAFS spectra with a method based on the Kramers‐Kronig transform. Bond distances, coordination numbers and Debye‐Waller factors were determined by a detailed XAFS data analysis and compared to those of reference compounds. In addition, changes of the atomic short range order of the sputter deposited Ta 2 O 5 ‐films induced by a thermal heat treatment in ambient air were examined as a function of the annealing temperature.

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