Open AccessReflection mode XAFS investigations of reactively sputtered thin films
Author(s) -
LützenkirchenHecht Dirk,
Frahm Ronald
Publication year - 2001
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049500019701
Subject(s) - x ray absorption fine structure , amorphous solid , materials science , thin film , sputtering , annealing (glass) , xanes , analytical chemistry (journal) , nitride , reflection (computer programming) , boron nitride , spectral line , chemistry , metallurgy , crystallography , spectroscopy , composite material , nanotechnology , physics , chromatography , quantum mechanics , astronomy , computer science , programming language , layer (electronics)
Amorphous Ta‐oxide and Sn‐nitride thin films were prepared by reactive sputter deposition on smooth float glass substrates and investigated ex situ using reflection mode XAFS. The absorption coefficient μ and its fine structure were extracted from the measured reflection mode XAFS spectra with a method based on the Kramers‐Kronig transform. Bond distances, coordination numbers and Debye‐Waller factors were determined by a detailed XAFS data analysis and compared to those of reference compounds. In addition, changes of the atomic short range order of the sputter deposited Ta 2 O 5 ‐films induced by a thermal heat treatment in ambient air were examined as a function of the annealing temperature.