A study of titanium nitride diffusion barriers between aluminium and silicon by X‐ray absorption spectroscopy: the Si, Ti and N results | Zendy

Hu Y. F. | Zendy; Sham T. K. | Zendy; Zou Z. | Zendy; Xu G. Q. | Zendy; Chan L. | Zendy; Yates B. W. | Zendy; Bancroft G. M. | Zendy

Open Access

A study of titanium nitride diffusion barriers between aluminium and silicon by X‐ray absorption spectroscopy: the Si, Ti and N results

Author(s) -

Hu Y. F.,

Sham T. K.,

Zou Z.,

Xu G. Q.,

Chan L.,

Yates B. W.,

Bancroft G. M.

Publication year - 2001

Publication title -

journal of synchrotron radiation

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.172

H-Index - 99

ISSN - 1600-5775

DOI - 10.1107/s0909049500018252

Subject(s) - tin , annealing (glass) , titanium nitride , materials science , aluminium , titanium , silicon , analytical chemistry (journal) , nitride , diffusion barrier , absorption spectroscopy , spectroscopy , absorption edge , layer (electronics) , nanotechnology , chemistry , metallurgy , optics , optoelectronics , band gap , quantum mechanics , physics , chromatography

We report a multi‐element, multi‐edge and multi‐detection mode X‐ray photoabsorption study of a series of Al/TiN x /Si(100) thin films as a function of the TiNx film thickness (100Å‐500Å) and of the annealing temperature (400°C‐600°C). The Si K‐ and L‐edge results show that Si does not diffuse to the surface for all the films. The high resolution Ti L‐edge and N K‐edge spectra show that the TiN x layer undergoes a dramatic chemical reaction with the gradual increase in the annealing temperature. This chemical reaction stabilizes at 560°C at which the TiN x film is known to fail to act as an effective diffusion barrier between Al and Si.

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