Open AccessXAFS studies of the formation of cobalt silicide on (3 1/2 by 3 1/2 ) SiC(0001)
Author(s) -
Platow W.,
Wood D. E.,
Burnette J. E.,
Nemanich R. J.,
Sayers D. E.
Publication year - 2001
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049500017921
Subject(s) - cobalt , annealing (glass) , x ray photoelectron spectroscopy , x ray absorption fine structure , materials science , silicide , analytical chemistry (journal) , thin film , crystallography , metallurgy , silicon , chemistry , nanotechnology , spectroscopy , nuclear magnetic resonance , physics , quantum mechanics , chromatography
Thin Co films (1‐8 nm) were directly, sequentially, and co‐deposited with Si (3.6‐29.2 nm) on the (3 1/2 × 3 1/2 )‐R30° reconstruction of 6H‐SiC(0001). The films were annealed over a temperature range of 823‐1373K and investigated with XAFS, XPS, AES and AFM. After annealing up to 1373K directly deposited Co films do not transform entirely to cobalt disilicide and C segregation is observed on the surface of the films. On the other hand, sequentially and co‐deposited films do form cobalt disilicide after annealing at 823K, but also show islanding after annealing at 923K.