Open AccessX‐ray‐excited optical luminescence of impurity atom in semiconductor
Author(s) -
Ishii M.,
Tanaka Y.,
Komuro S.,
Morikawa T.,
Aoyagi Y.,
Ishikawa T.
Publication year - 2001
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049500014564
Subject(s) - excited state , x ray absorption fine structure , luminescence , atom (system on chip) , atomic physics , erbium , materials science , undulator , absorption (acoustics) , impurity , silicon , excitation , relaxation (psychology) , chemistry , doping , molecular physics , optoelectronics , optics , beam (structure) , spectroscopy , physics , psychology , social psychology , organic chemistry , quantum mechanics , computer science , composite material , embedded system
We observed the x‐ray‐excited optical luminescence (XEOL) of erbium‐doped silicon (Si:Er) thin films to make a site‐selective x‐ray absorption fine structure (XAFS) measurement of an optically active Er atom. The undulator beam was used for the increment of the electron population in the excited state, and following XEOL at an infrared wavelength of 1.54 µm with minimum absorption loss in the host Si was detected. The edge‐jump and XAFS oscillation were successfully obtained at the Er L III ‐edge. This spectrum originated from inner‐shell excitation and relaxation of only the optically active Er atom, indicating that site‐selectivity at an atomic level was achieved.