Open AccessAtomic surrounding of Co implanted in AlN at high energy
Author(s) -
Traverse A.,
Delobbe A.,
Zanghi D.,
Rentería M.,
Gailhanou M.
Publication year - 2001
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049500012632
Subject(s) - extended x ray absorption fine structure , ion , materials science , ceramic , k edge , absorption (acoustics) , atomic physics , analytical chemistry (journal) , chemistry , absorption spectroscopy , metallurgy , optics , composite material , physics , organic chemistry , chromatography
AlN bulk ceramic has been implanted with energetic Co ions. In order to accurately characterise the atomic surrounding of the implanted ions, X‐ray absorption measurements were carried out at 80 K in the fluorescence mode at the Co K edge in the as‐implanted and annealed states. Simulation of the EXAFS oscillations allowed us to identify a first stage where Co is inserted in the AlN matrix followed by a second stage where Co precipitates form.