Open AccessStructure and low‐temperature thermal relaxation of ion‐implanted germanium
Author(s) -
Glover C. J.,
Ridgway M. C.,
Yu K. M.,
Foran G. J.,
Clerc C.,
Hansen J. L.,
NylandstedLarsen A.
Publication year - 2001
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s0909049500012620
Subject(s) - extended x ray absorption fine structure , amorphous solid , materials science , bond length , germanium , annealing (glass) , crystallography , relaxation (psychology) , analytical chemistry (journal) , chemistry , absorption spectroscopy , crystal structure , optics , silicon , psychology , social psychology , physics , chromatography , metallurgy , composite material
The structure of implantation‐induced damage in Ge has been investigated using high resolution extended X‐ray absorption fine structure spectroscopy(EXAFS). EXAFS data analysis was performed with the Cumulant Method. For the crystalline‐to‐amorphous transformation, a progressive increase in bond‐length was observed without the presence of an asymmetry in interatomic distance distribution (RDF). Beyond the amorphization threshold the RDF was dose dependent and asymmetric, where the bond‐length and asymmetry increased as functions of ion dose. Such an effect was attributed to the formation of three‐ and five‐fold coordinated atoms within the a morphous phase. Low‐temperature thermal annealing resulted in structural relaxation of the amorphous phase as evidenced by a reduction in the centroid ,asymmetry and width of the RDF, as consistent with a reduction in the fraction of non four‐fold coordinated atoms.The results have been compared to other EXAFS studies of amorphous Ge, and it issuggested thatthe range of bond‐lengths reported therein is related to the sample preparation method and state of relaxation.