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Structural properties of p + ‐type porous silicon layers versus the substrate orientation: an X‐ray diffraction comparative study
Author(s) -
Faivre C.,
Bellet D.
Publication year - 1999
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889899011103
Subject(s) - reciprocal lattice , materials science , silicon , diffraction , crystallography , porosity , porous silicon , x ray crystallography , substrate (aquarium) , lattice constant , orientation (vector space) , x ray , surface finish , optics , geometry , composite material , chemistry , optoelectronics , physics , oceanography , geology , mathematics
The structural properties of (001)‐ and (111)‐oriented p + ‐type porous silicon samples have been investigated using X‐ray techniques. X‐ray reflectivity applied to thin layers of both orientations allows the estimation of the layer thickness, the porosity and the interface roughness. High‐resolution X‐ray diffraction was used to obtain symmetrical and asymmetrical rocking curves, as well as maps of the reciprocal space. The lattice‐mismatch parameter was measured and some indications about the pore shape, orientation and size were deduced. The obtained X‐ray curves as well as differential scanning calorimetry data are compared to discuss the influence of the substrate orientation on the structural properties of p + ‐type porous silicon material.