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Growth and Structure of Thin Pt 2 Si and PtSi Layers on Si(111) and (001) Characterized with In Situ Grazing Incidence Diffraction
Author(s) -
Kumpf C.,
Nicula R.,
Burkel E.
Publication year - 1997
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889897005815
Subject(s) - silicide , materials science , annealing (glass) , diffraction , in situ , crystallite , layer (electronics) , thin film , substrate (aquarium) , silicon , crystallography , analytical chemistry (journal) , optics , metallurgy , nanotechnology , chemistry , geology , physics , oceanography , organic chemistry , chromatography
The growth of thin platinum silicide layers on Si(111) and (001) surfaces was studied with in situ grazing incidence diffraction and X‐ray reflectivity measurements during the annealing process. The interface roughnesses, layer thicknesses, structures and orientations of the three phases, Pt, Pt 2 Si and PtSi, were identified and their temperature dependencies observed. In the case of PtSi on Si(111), a plane reaction front was found, growing from the Si substrate towards the sample surface and forming an epitactic PtSi layer. In contrast, PtSi on Si(001) grows upwards locally and forms `islands' of polycrystalline material on the Si surface.