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The π/2 Side‐Reflection Laue Technique and the New Chart
Author(s) -
Park Y.H.,
Yeom H.Y.,
Yoon H.G.,
Kim K.W.
Publication year - 1997
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889897000721
Subject(s) - reflection (computer programming) , chart , optics , far side of the moon , materials science , physics , computer science , mathematics , statistics , geophysics , programming language
For the capability of dynamic studies of structural changes of crystals under the environment of heat, electric or magnetic field, the π /2 side‐reflection Laue technique is performed in which the X‐ray source, the specimen and the film are aligned along an L ‐shaped track. A new chart has also been designed for the analysis of π /2 side‐reflection Laue patterns. This new chart is applied to the analysis of crystal orientation in the π /2 side‐reflection Laue technique and to indexing the planes of simultaneous multiple‐reflection images in Berg–Barrett topography. Also, the equation of zonal trace has been derived for depicting the zonal curves of configurations of π /2 side‐reflection spots and confirming the results which are analyzed by the new chart.